Wafer Key Manufacturing Txheej txheem

Polishing txheej txheem
Nrog rau kev txhim kho txuas ntxiv ntawm kev sib koom ua ke (IC) kev tsim khoom siv thev naus laus zis, cov nti tshwj xeeb qhov loj me tau txais me me thiab me me, cov txheej txheem sib txuas tau nce zuj zus, thiab txoj kab uas hla wafer kuj nce ntxiv. Txhawm rau kom ua tiav cov txheej txheem sib txuas, lub wafer nto yuav tsum muaj qhov sib luag siab heev, smoothness thiab huv si, thiab tshuaj kho tshuab polishing (CMP) yog tam sim no qhov zoo tshaj plaws wafer flattening tshuab. Nws yog hu ua tsib tseem ceeb tshaj plaws thev naus laus zis ntawm IC tsim ua ke nrog lithography, etching, ion implantation, thiab PVD / CVD.
CMP equipment is mainly composed of polishing head, polishing disc, dresser, polishing liquid delivery system and other parts. The polishing head and its pressure control system are the most critical and complex components, and are the basis and core of CMP technology to achieve nano-level flattening. At present, the most advanced 300mm wafer polishing head abroad is loaded by air pressure, with functions such as zone pressure, vacuum adsorption, floating holding ring and self-adaptation, which is very complex. With the continuous reduction of feature size and the continuous increase of wafer diameter, the requirements for CMP surface quality are getting higher and higher, and the traditional single-zone pressure polishing head can no longer meet the requirements. If the polishing head can divide the wafer into multiple areas for loading, the material removal rate of different areas can be controlled by changing the amount of applied pressure. The polishing head of the current international high-end 300 mm wafer CMP equipment usually has three pressure zones. In addition, at the 45 nm technology node and below, the current CMP equipment (polishing pressure>6.985 kPa) feem ntau yuav ua rau muaj teeb meem xws li kev tawg thiab khawb ntawm Low-k cov ntaub ntawv thiab tev ntawm Low-k nruab nrab / tooj liab interface. Ultra-siab siab CMP (<3.448 kPa) will be the main development direction of CMP equipment and technology in the future.
Nyob rau hauv cov txheej txheem CMP, lub taub hau polishing feem ntau plays lub luag hauj lwm hauv qab no: ① Siv siab rau lub wafer; ② Tsav lub wafer tig thiab xa torque; ③ Xyuas kom meej tias lub wafer thiab polishing ncoo yog ib txwm haum zoo yam tsis tau poob los yog tawg. Tsis tas li ntawd, nyob rau hauv high-end CMP cov cuab yeej, lub taub hau polishing yog qhov zoo dua tuaj yeem clamp lub wafer los ntawm nws tus kheej cov qauv yam tsis muaj kev pab los ntawm lwm yam kev mob los txhim kho kev tsim khoom.
Lub zoned siab polishing lub taub hau yog ib qho tseem ceeb hauv kev ntsuas cov khoom siv CMP. Nws lub tswv yim tseem ceeb los ntawm tus qauv Preston. Raws li tus qauv no. Raws li kev tshawb fawb ntawm CHEN li al., qhov ntau partitions lub taub hau polishing muaj, lub zog nws muaj peev xwm los kho cov khoom tshem tawm tus nqi. Txawm li cas los xij, qhov ntau partitions muaj, qhov nyuaj nws cov qauv yog thiab qhov nyuaj dua nws yog los tsim. Tsis muaj qhov tshwj xeeb yuav tsum tau ua rau qhov loj me ntawm txhua cheeb tsam ntawm polishing taub hau. Nws tuaj yeem muab faib sib npaug lossis faib raws li qhov tseeb sab hauv ntawm lub taub hau polishing.
Txhawm rau tiv thaiv lub wafer los ntawm kev muab pov tseg thaum lub sij hawm tig, lub taub hau polishing yuav tsum muaj lub nplhaib tuav. Hauv keeb kwm kev loj hlob ntawm CMP thev naus laus zis, ob hom kev tuav cov nplhaib tau tshwm sim: cov nplhaib tuav ruaj khov thiab cov nplhaib ntab ntab. Txij li thaum lub nplhaib ruaj ruaj tsis tuaj yeem zam qhov cuam tshuam ntawm ntug, cov cuab yeej siv CMP tam sim no siv lub nplhaib ntab ntab. Los ntawm kev siv cov kev sib txawv rau lub nplhaib tuav lub nplhaib, kev sib cuag ntawm lub wafer thiab polishing ncoo tuaj yeem hloov kho, yog li txhim kho cov nyhuv ntug.
Txij li thaum lub nplhaib tuav haum nruj nrog lub polishing ncoo, cov grooves yuav tsum tau tsim nyob rau hauv qab ntawm lub nplhaib tuav los coj cov kua polishing kom ntseeg tau nkag mus rau wafer / polishing pad interface. Tsis tas li ntawd, txhawm rau txhim kho lub neej, lub nplhaib tuav yuav tsum tau xaiv los ntawm lub zog siab, corrosion-resistant, thiab hnav-resistant cov ntaub ntawv xws li polyphenylene sulfide (PPS) los yog polyetheretherketone (PEEK).
Raws li tau hais ua ntej, lub luag haujlwm tseem ceeb ntawm lub taub hau polishing yog clamp lub wafer thiab paub txog kev hloov pauv ceev thiab txhim khu kev qha ntawm wafer ntawm qhov chaw thau khoom thiab tshem tawm thiab chaw nres tsheb polishing. Nyob rau hauv keeb kwm kev loj hlob ntawm CMP thev naus laus zis, tau muaj ntau txoj hauv kev clamping xws li tshuab clamping, paraffin bonding, thiab lub tshuab nqus tsev nqus, tab sis cov txheej txheem saum toj no tsis tuaj yeem ua tau raws li qhov yuav tsum tau muaj ntawm cov khoom siv high-end CMP hais txog kev ua tau zoo, kev ntseeg tau, thiab kev huv. Multi-zone polishing taub hau siv lub tshuab nqus tsev adsorption los clamp lub wafer. Lub hauv paus ntsiab lus yog pom nyob rau hauv daim duab 2. Ua ntej, qhov zoo siab yog siv rau ntau thaj tsam airbag kom nyem tawm cov huab cua ntawm lub airbag thiab lub wafer, thiab ces qhov zoo thiab tsis zoo siab ua ke tswj ntawm txawv airbag partitions yog siv los tsim. ib qho tsis zoo siab cheeb tsam ntawm lub airbag thiab lub wafer, thiab lub wafer yog nrees adsorbed ntawm lub taub hau polishing. Txoj kev no ua rau kev siv tag nrho ntawm ntau thaj tsam airbag qauv ntawm polishing taub hau nws tus kheej, thiab muaj qhov zoo ntawm kev ceev ceev, txhim khu kev qha, thiab tsis muaj kuab paug.