Product Description:
Silicon carbide (SiC), tseem hu ua carborundum, yog ib qho semiconductor nrog cov tshuaj formula SiC uas yog tsim los ntawm silicon thiab carbon. Cov khoom siv uas xav tau cov hluav taws xob siab, kub siab, lossis ob qho tib si siv silicon carbide (SiC). Ib qho ntawm cov khoom tseem ceeb ntawm LEDs yog SiC, uas tseem yog siv los ua lub tshuab hluav taws xob hauv cov hluav taws xob muaj zog thiab ua ib qho substrate rau GaN ntaus ntawv loj hlob.
Qhov Loj
|
4H-N Hom / High Purity SiC wafer / ingots 2 nti 4H N-Hom SiC wafer/ingots |
4H Semi-insulating / High Purity SiC wafer 2 nti 4H Semi-insulating SiC wafer |
|
6H N-Type SiC wafer |
Customzied loj rau 2-6inch |
|
Yam khoom |
Specifications |
|
|
Polytype |
4 H-SiC |
6 H-SiC |
|
Txoj kab uas hla |
2 nti|3 nti|4 nti|6 nti |
2 nti|3 nti|4 nti|6 nti |
|
Thickness |
330 μm ~ 350 μm |
330 μm ~ 350 μm |
|
Kev coj ua |
N - hom / Semi-insulating |
N - hom / Semi-insulating |
|
Dopant |
N2 (Nitrogen)V (Vanadium) |
N2 ( Nitrogen ) V ( Vanadium ) |
|
Kev taw qhia |
Ntawm axis<0001> |
Ntawm axis<0001> |
|
Kev tiv thaiv |
{0}}.015 ~ 0.03 ohm-cm |
{0}}.02 ~ 0.1 ohm-cm |
|
Micropipe ntom ntom (MPD) |
Tsawg dua lossis sib npaug li 10 / cm2 ~ Tsawg dua lossis sib npaug li 1 / cm2 |
Tsawg dua lossis sib npaug li 10 / cm2 ~ Tsawg dua lossis sib npaug li 1 / cm2 |
|
TTV |
Tsawg dua los yog sib npaug li 15 μm |
Tsawg dua los yog sib npaug li 15 μm |
|
Hnyav / Warp |
Tsawg dua los yog sib npaug li 25 μm |
Tsawg dua los yog sib npaug li 25 μm |
|
Nto |
DSP/SSP |
DSP/SSP |
|
Qib |
Qib / Kev Tshawb Fawb |
Qib / Kev Tshawb Fawb |
|
Crystal Stacking Sequence |
ABCB |
ABCABC |
|
Lattice parameter |
a=3.076A , c=10.053A |
a=3.073A , c=15.117A |
|
Eg/eV(Band-gap) |
3.27 e.v |
3, 02 eV |
|
ε (Dielectric tsis tu ncua) |
9.6 |
9.66 |
|
Refraction Index |
n0 =2.719 ne =2.777 |
n0 =2.707 , ne =2.755 |
6 H-SiCWaferspecs:
Cim npe nrov: Tuam Tshoj sic wafer manufacturers, lwm tus neeg, Hoobkas
