2", 3" thiab 4" GaSb Substrate

2", 3" thiab 4" GaSb Substrate

GaSb, ib qho tseem ceeb III-V pab pawg ncaj qha bandgap semiconductor khoom, muaj qhov dav bandgap ntawm 0.72eV, ua rau nws zoo meej substrate rau kev tsim cov mid-IR band lasers thiab Class I superlattice detectors.
Xa kev nug
Product Description:

 

GaSb, ib qho tseem ceeb III-V pab pawg ncaj qha bandgap semiconductor khoom, muaj qhov dav bandgap ntawm 0.72eV, ua rau nws zoo meej substrate rau kev tsim cov mid-IR band lasers thiab Class I superlattice detectors.

 

General SPECS

Loj

2"

3"

4"

Kev taw qhia

(100) ± 0.1 degree

(100) ± 0.1 degree

(100) ± 0.1 degree

Txoj kab uas hla (mm)

50.5±0.5

76.2±0.4

100.0±0.5

NTAWM Orientation

EJ

EJ

EJ

Ua siab ntev

± 0.1 degree

± 0.1 degree

± 0.1 degree

NTAWM Length (mm)

16±2

22±2

32.5±2.5

YOG Length (mm)

8±1

11±1

18±1

Thickness (hli)

500±25

625±25

1000±25

Qhov loj tuaj yeem kho tau.

Conductivity thiab Dopant

Dopant

Hom conductivity

CC / cm-3

Mobility / cm² V-1S-1

Dislocation Ceev / cm-2

Undoped

p-type

Tsawg dua lossis sib npaug li 2x10-17

>500

2", 3", 4" Tsawg dua los yog sib npaug rau 1000

Tellurium (zeeg)

n-type

(0.5~9)x1017

3500~2000

2", 3", 4" Tsawg dua los yog sib npaug rau 1000

Kev ntsuas hluav taws xob nruj dua tuaj yeem muab tau raws li qhov kev thov.

HLUB

Nto

 

2"

3"

4"

Polished / Etched

TVV (μm)

<8

<8

<10

Hnyav (μm)

<8

<8

<10

Warp (μm)

<12

<12

<15

Polished / Polished

TVV (μm)

<5

<5

<5

Hnyav (μm)

<5

<5

<5

Warp (μm)

<8

<8

<10

 

Cim npe nrov: 2", 3" thiab 4" gasb substrate, Tuam Tshoj 2", 3" thiab 4" gasb substrate manufacturers, lwm tus neeg, Hoobkas