Product Description:
GaSb, ib qho tseem ceeb III-V pab pawg ncaj qha bandgap semiconductor khoom, muaj qhov dav bandgap ntawm 0.72eV, ua rau nws zoo meej substrate rau kev tsim cov mid-IR band lasers thiab Class I superlattice detectors.
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General SPECS |
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Loj |
2" |
3" |
4" |
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Kev taw qhia |
(100) ± 0.1 degree |
(100) ± 0.1 degree |
(100) ± 0.1 degree |
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Txoj kab uas hla (mm) |
50.5±0.5 |
76.2±0.4 |
100.0±0.5 |
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NTAWM Orientation |
EJ |
EJ |
EJ |
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Ua siab ntev |
± 0.1 degree |
± 0.1 degree |
± 0.1 degree |
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NTAWM Length (mm) |
16±2 |
22±2 |
32.5±2.5 |
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YOG Length (mm) |
8±1 |
11±1 |
18±1 |
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Thickness (hli) |
500±25 |
625±25 |
1000±25 |
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Qhov loj tuaj yeem kho tau. |
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Conductivity thiab Dopant |
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Dopant |
Hom conductivity |
CC / cm-3 |
Mobility / cm² V-1S-1 |
Dislocation Ceev / cm-2 |
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Undoped |
p-type |
Tsawg dua lossis sib npaug li 2x10-17 |
>500 |
2", 3", 4" Tsawg dua los yog sib npaug rau 1000 |
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Tellurium (zeeg) |
n-type |
(0.5~9)x1017 |
3500~2000 |
2", 3", 4" Tsawg dua los yog sib npaug rau 1000 |
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Kev ntsuas hluav taws xob nruj dua tuaj yeem muab tau raws li qhov kev thov. |
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HLUB |
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Nto |
2" |
3" |
4" |
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Polished / Etched |
TVV (μm) |
<8 |
<8 |
<10 |
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Hnyav (μm) |
<8 |
<8 |
<10 |
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Warp (μm) |
<12 |
<12 |
<15 |
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Polished / Polished |
TVV (μm) |
<5 |
<5 |
<5 |
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Hnyav (μm) |
<5 |
<5 |
<5 |
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Warp (μm) |
<8 |
<8 |
<10 |
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Cim npe nrov: 2", 3" thiab 4" gasb substrate, Tuam Tshoj 2", 3" thiab 4" gasb substrate manufacturers, lwm tus neeg, Hoobkas

